19.09.2019

N60B Transistor Pdf

MOSFET Cross-Reference Search 2SK3568 Datasheet (PDF) 1.1. Size:245K toshiba 2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3568 Switching Regulator Applications Unit: mm Х Low drain-source ON resistance: RDS (ON) = 0.4? (typ.) Х High forward transfer admittance: Yfs = 8.5S (typ.) Х Low leakage current: IDSS = 100?A (VDS = 500 V) Х Enhancement mode: Vth = 2.04.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 4.1.

Size:137K update пїњ 4.2. Size:227K toshiba 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3561 Switching Regulator Applications Unit: mm Х Low drain-source ON resistance: RDS (ON) = 0.75? (typ.) Х High forward transfer admittance: Yfs = 6.5S (typ.) Х Low leakage current: IDSS = 100?A (VDS = 500 V) Х Enhancement mode: Vth = 2.04.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25∞C) 4.3. Size:232K toshiba 2SK3562 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3562 Switching Regulator Applications Unit: mm Х Low drain-source ON resistance: RDS (ON) = 0.9? (typ.) Х High forward transfer admittance: Yfs = 5.0S (typ.) Х Low leakage current: IDSS = 100?A (VDS = 600 V) Х Enhancement mode: Vth = 2.04.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25∞C) C 4.4.

Size:348K toshiba TENTATIVE 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) 2SK3563 unit:mm Switching Regulator Applications 10±0.3 2.7±0.2?3.2±0.2 Х Low drain-source ON resistance: RDS (ON) = 1.35? (typ.) Х High forward transfer admittance: Yfs = 3.5S (typ.) Х Low leakage current: IDSS = 100?A (VDS = 500 V) Х Enhancement-mode: Vth = 2.04.0 V (VDS = 10 V, ID = 4.5. Size:214K toshiba 2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIV) 2SK3566 Switching Regulator Applications Unit: mm Х Low drain-source ON-resistance: RDS (ON) = 5.6? (typ.) Х High forward transfer admittance: Yfs = 2.0 S (typ.) Х Low leakage current: IDSS = 100?A (max) (VDS = 720 V) Х Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Rat 4.6. Size:341K toshiba TENTATIVE 2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) 2SK3565 unit:mm Switching Regulator Applications 10±0.3 2.7±0.2?3.2±0.2 Х Low drain-source ON resistance: RDS (ON) = 2.0? (typ.) Х High forward transfer admittance: Yfs = 4.5 S (typ.) Х Low leakage current: IDSS = 100?A (VDS = 720 V) Х Enhancement-mode: Vth = 2.04.0 V (VDS = 10 V, ID = 4.7. Size:248K toshiba 2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIV) 2SK3564 Switching Regulator Applications Unit: mm Х Low drain-source ON resistance: RDS (ON) = 3.7?

(typ.) Х High forward transfer admittance: Yfs = 2.6 S (typ.) Х Low leakage current: IDSS = 100?A (VDS = 720 V) Х Enhancement mode: Vth = 2.04.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 4.8. Size:223K toshiba 2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3567 Switching Regulator Applications Unit: mm Х Low drain-source ON resistance: RDS (ON) = 1.7?

Наименование прибора: SSP2N60B. Тип транзистора: MOSFET. Полярность: N.. SSP2N60B Datasheet (PDF). Ssp2n60b sss2n60b.pdf Size:862K _fairchild_semi. SSP2N60B/SSS2N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.0A, 600V, RDS(on) = 5.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12.5 nC) planar, DMOS technology. Группа компаний «Транзистор» осуществляет поставку и продажу электронных компонентов. Вот нашел в одном месте.

(typ.) Х High forward transfer admittance: Yfs = 2.5S (typ.) Х Low leakage current: IDSS = 100?A (VDS = 600 V) Х Enhancement mode: Vth = 2.04.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 4.9. Size:236K toshiba 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3569 Switching Regulator Applications Unit: mm Х Low drain-source ON resistance: RDS (ON) = 0.54? (typ.) Х High forward transfer admittance: Yfs = 8.5S (typ.) Х Low leakage current: IDSS = 100?A (VDS = 600 V) Х Enhancement mode: Vth = 2.04.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 4.10. Size:76K panasonic Power MOSFETs 2SK3560 Silicon N-channel power MOSFET Unit: mm 4.6±0.2 10.5±0.3 1.4±0.1 For PDP/For high-speed switching ¶ Features Х Low on-resistance, low Qg 1.4±0.1 Х High avalanche resistance 2.5±0.2 0.8±0.1 2.54±0.3 0 to 0.3 ¶ Absolute Maximum Ratings TC = 25∞C (10.2) Parameter Symbol Rating Unit (8.9) Drain-source surrender voltage VDSS 230 V 1 2 3 Gate-source surrender.

Номер в каталоге: D13007K, 3DDD13007K Function: NPN bipolar power transistor Package: TO220 Type Производитель: Jilin Sino Microelectronics цоколевка: Описание: 3DD13007K low frequency amplification shell rated 1. High pressure 2. High current capacity 3. High switching speed 4. High reliability 5. High-frequency switching power supply 6. Energy-saving lamp electronic ballast 7. High-frequency power conversion 8. General power amplifier circuit D13007K Даташит PDF Download Другие с той же файл данные: 3DDD13007K,D13007K Related articles across the web.